13003CDH transistor equivalent, npn silicon transistor.
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability
in switch mode.
* FEATURES
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1..
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.
* FEATURES
* Reverse biased SOA with inductive load.
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